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| RB055L-40 Diodes Schottky barrier diode RB055L-40 Applications General rectification Features 1) Small power mold type (PMDS) 2) Low IR 3) High reliability External dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 2.60.2 2.0 4.50.2 1.20.3 5 2 0.10.02 0.1 5.00.3 1.50.2 2.00.2 PMDS Structure Silicon epitaxial planar ROHM : PMDS JEDEC : SOD-106 Manufacture Date Structure Taping dimensions (Unit : mm) 2.00.05 4.00.1 1.550.05 1.750.1 0.3 5.50.05 1.55 2.90.1 4.00.1 2.8MAX Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak 60Hz1cyc Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 40 40 3 40 150 -40 to +150 5.30.1 0.05 9.50.1 Unit V V A A (*1) Mounted on epoxy board. 180Half sine wave Electrical characteristic (Ta=25C) Parameter Forward voltagae Reverse current Symbol VF IR Min. - Typ. - Max. 0.65 0.5 Unit V mA Conditions IF=3.0A VR=40V 120.2 4.2 1/3 RB055L-40 Diodes Electrical characteristic curves Ta=150 10000 Ta=150 10000 REVERSE CURRENT:IR(uA) Ta=125 1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD CURRENT:IF(A) 1000 1000 100 10 1 Ta=125 Ta=75 Ta=-25 Ta=25 Ta=75 100 100 Ta=25 10 Ta=-25 0.1 0.01 10 1 0.1 0 100 200 300 400 500 600 700 0.001 0 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 10 20 30 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 40 1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 580 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 400 Ta=25 VR=30V n=30pcs VR=40V n=30pcs Ta=25 570 Ta=25 IF=3A n=30pcs 90 80 70 60 50 40 30 20 10 AVE:8.172uA AVE:6.62uA :1.9469uA 390 380 370 360 350 340 330 320 310 300 AVE:329.5pF Ta=25 f=1MHz VR=0V n=10pcs 560 AVE:559.6mV 550 540 530 VF DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP 300 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 30 1cyc 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 100 250 200 150 100 50 0 Ifsm 25 20 15 AVE:8.20ns 10 5 0 AVE:117.2A 10 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Io-PfCHARACTERISTICS 100 IFSM DISRESION MAP 250 Ifsm t 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) Mounted on epoxy board 5 4.5 Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) PEAK SURGE FORWARD CURRENT:IFSM(A) 200 4 3.5 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 4 4.5 5 Sin(180) D=1/2 DC 100 150 10 IM=100mA Rth(j-c) IF=1A 100 50 1 1ms time 300us 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.01 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 2/3 RB055L-40 Diodes 0.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 5 4.5 5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.4 REVERSE POWER DISSIPATION:PR (W) 4 3.5 3 2.5 2 1.5 1 0.5 0A 0V DC Io t T D=1/2 VR D=t/T VR=20V Tj=150 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0A 0V Io t T 0 VR D=t/T VR=20V Tj=150 150 D=1/2 DC Sin(180) 0.3 DC 0.2 Sin(180) D=1/2 0.1 Sin(180) 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 40 0 0 25 50 75 100 125 150 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV 25 20 AVE:12.8kV 15 10 5 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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